Written in English
|Statement||by Satya Pal Khanna.|
|The Physical Object|
|Pagination||113 leaves, bound :|
|Number of Pages||113|
BORON AND PHOSPHORUS DIFFUSION IN SILICON: INTERSTITIAL, VACANCY AND COMBINATION MECHANISMS VU VAN HUNG Hanoi National University of Education, Xuan Thuy Street, Hanoi PHAN THI THANH HONG Hanoi Pedagogic University No-2, Xuan Hoa, Phuc Yen, Vinh Phuc BUI VAN KHUE Hai Phong University, Phan Dang Luu, Kien An, Hai Phong Size: KB. Mechanisms of boron diffusion in silicon and germanium S. Mirabella, 1,a) D. De Salvador, 2 E. Napolitani, 2 E. Bruno, 1 and F. Priolo 1 1 MATIS IMM-CNR and Dipartimento di Fisica e Astronomia. the reaction and diffusion of boron interstitial atoms and related defects in silicon. These equations have the general form for species i: @C i @t ¼ @J i @x þ G i (1) where C i, J i, and G i denote the concentration, flux, and net generation rate of species i, respectively. The flux J i consists of Fickian diffusion and electric drift motion. Characteristics of Boron Diffusion in Polysilicon/Silicon Systems with a Thin Si-B Layer as Diffusion Source T. P. Chen, T. F. Let, H. C. Lin, and C. Y. Chang Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, .
Venezia et al. investigated the diffusion of ultra-shallow implanted B in α-Si using a SOI (silicon on insulator) substrate to suppress the SPER and hence to enlarge the range of annealing temperatures and times in the α phase. 10 by: The combination of Ge pre‐amorphization implantation, low‐energy boron implantation, and non‐melt laser annealing is a promising method for forming ultrashallow p + /n junctions in silicon. In this study, shallow p + /n junctions were formed by non‐melt annealing implanted samples using a green laser (visible laser). The dopant diffusion, activation, and recrystallization of an Cited by: 9. 4. Determination of the effect of co-implanted fluorine on the diffusion of ion implanted boron in silicon as a function of fluorine co-implantation conditions. 5. Observation of a fluorine trapping silicon interstitials, thereby reducing transient-enhanced diffusion of boron in ion-implanted silicon. EFFECT OF PRESSURE ON BORON DIFFUSION IN SILICON Yuechao Zhao1, Michael J. Aziz1, Salman Mitha2, and David Schiferl3 1Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 2Charles Evans and Associates, Redwood City, CA 3Los Alamos National Laboratory, Los Alamos, NM ABSTRACT We are studying the effect of pressure on boron diffusion in silicon File Size: 79KB.
DETERMINATION OF SUB -NANOGRAM QUANTITIES OF BORON BY DIFFUSION IN SILICON INTRODUCTION With the advent of high purity materials in the fields of atomic energy, semiconductor technology, and high purity metals for space rockets, the relative meaning of the word "small" has been changing over the past couple of decades. and fluorine,3'9 in sufficient quantities, can increase diffu-sivity by over an order of magnitude. Based on energy cal-culations by Fowler and Edwards,'5 when trigonal boron substitutes for a tetrahedral silicon atom, the hydrogen attaches to the remaining oxygen atom. This lowers the activation energy for diffusion.1° The work of Navi and. For N-type silicon material, the pn junction is directly formed by boron diffusion. In this paper, comparing with spin-on diffusion method, we mainly focus on the boron diffusion with BBr3. Diffusion temperature, N2 volume and diffusion time etc. elements have the remarkable influence on the number and equality of the sheet resistance, junction depth etc. of the silicon solar cell after : Le Yang, Jing Yang, Xin Fang, Yang Shi, Jingxiao Wang, Qinghao Ye, Jianhua Huang, Xiang Li, Chunjian. the diffusion of a single B atom in a bulk Si lattice. You can read more about the AKMC method in the tutorial Adaptive Kinetic Monte Carlo Simulation of Pt on Pt(). Boron is known to diffuse though silicon during ion beam implantation due to the presence of a large number of defects. Furthermore, boron is most stable at substitutional.